на замовлення 3111 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 210.58 грн |
| 10+ | 174.72 грн |
| 25+ | 143.56 грн |
| 100+ | 122.66 грн |
| 250+ | 115.69 грн |
| 500+ | 108.72 грн |
| 1000+ | 93.39 грн |
Відгуки про товар
Написати відгук
Технічний опис SQJQ186ER-T1_GE3 Vishay Semiconductors
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S), Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Gull Wing, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 329A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10552 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції SQJQ186ER-T1_GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SQJQ186ER-T1_GE3 | Виробник : Vishay Siliconix |
 Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 329A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10552 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |
|
|
|
SQJQ186ER-T1_GE3 | Виробник : Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S) Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 329A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10552 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |