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SPI12N50C3XKSA1 Infineon Technologies
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Description: MOSFET N-CH 560V 11.6A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 950 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
268+ | 78.34 грн |
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Технічний опис SPI12N50C3XKSA1 Infineon Technologies
Description: MOSFET N-CH 560V 11.6A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 500µA, Supplier Device Package: PG-TO262-3-1, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 560 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V.
Інші пропозиції SPI12N50C3XKSA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SPI12N50C3XKSA1 | Виробник : Infineon Technologies |
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товар відсутній |
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SPI12N50C3XKSA1 | Виробник : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 500µA Supplier Device Package: PG-TO262-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 560 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
товар відсутній |
|
![]() |
SPI12N50C3XKSA1 | Виробник : Infineon Technologies |
![]() |
товар відсутній |