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SPD03N60S5BTMA1 Infineon Technologies

Name: SPD03N60S5BTMA1
Brand: Infineon Technologies
SKU: 11519790-3
Price: 37.87 UAH
Availability: InStock

SPD_U03N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c8ab0471f

Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 135µA
Supplier Device Package: PG-TO252-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V

на замовлення 12175 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна без ПДВ
562+	37.87 грн

Мінімальне замовлення: 562

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Технічний опис SPD03N60S5BTMA1 Infineon Technologies

Description: MOSFET N-CH 600V 3.2A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 135µA, Supplier Device Package: PG-TO252-3-11, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V.

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SPD03N60S5BTMA1	Виробник : Infineon Technologies	Description: MOSFET N-CH 600V 3.2A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 135µA Supplier Device Package: PG-TO252-3-11 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V	товар відсутній
SPD03N60S5BTMA1	Виробник : Infineon Technologies	Description: MOSFET N-CH 600V 3.2A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 135µA Supplier Device Package: PG-TO252-3-11 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V	товар відсутній
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