SP8K31FRATB ROHM
Виробник: ROHMDescription: ROHM - SP8K31FRATB - Dual-MOSFET, n-Kanal, 60 V, 60 V, 3.5 A, 3.5 A, 0.085 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 3.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 3.5A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.085ohm
Verlustleistung, p-Kanal: 2W
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOP
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.085ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 2W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (23-Jan-2024)
на замовлення 3525 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 39.32 грн |
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Технічний опис SP8K31FRATB ROHM
Description: ROHM - SP8K31FRATB - Dual-MOSFET, n-Kanal, 60 V, 60 V, 3.5 A, 3.5 A, 0.085 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 3.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, Drain-Source-Spannung Vds, p-Kanal: 60V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 3.5A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.085ohm, Verlustleistung, p-Kanal: 2W, Drain-Source-Spannung Vds, n-Kanal: 60V, euEccn: NLR, Bauform - Transistor: SOP, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.085ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 2W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (23-Jan-2024).
Інші пропозиції SP8K31FRATB за ціною від 20.1 грн до 66.7 грн
| Фото | Назва | Виробник | Інформація |
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SP8K31FRATB | Виробник : ROHM Semiconductor |
MOSFETs Nch+Nch 60V Vds 3.5A 0.1Rds(on) 3.7Qg |
на замовлення 411 шт: термін постачання 21-30 дні (днів) |
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SP8K31FRATB | Виробник : ROHM |
Description: ROHM - SP8K31FRATB - Dual-MOSFET, n-Kanal, 60 V, 60 V, 3.5 A, 3.5 A, 0.085 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 3.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.085ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOP Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.085ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) |
на замовлення 3525 шт: термін постачання 21-31 дні (днів) |
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SP8K31FRATB | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 14A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 3.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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SP8K31FRATB | Виробник : Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 3.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Grade: Automotive Qualification: AEC-Q101 |
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SP8K31FRATB | Виробник : Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 3.5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Grade: Automotive Qualification: AEC-Q101 |
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SP8K31FRATB | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 14A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 3.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |