SMCJ10AHE3/57T Vishay Semiconductor Diodes Division
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
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Технічний опис SMCJ10AHE3/57T Vishay Semiconductor Diodes Division
Category: Unidirectional SMD transil diodes, Description: Diode: TVS; 1.5kW; 11.1V; 88.2A; unidirectional; SMC; reel,tape, Breakdown voltage: 11.1V, Leakage current: 5µA, Mounting: SMD, Kind of package: reel; tape, Type of diode: TVS, Features of semiconductor devices: glass passivated, Manufacturer series: SMCJ, Technology: TransZorb®, Case: SMC, Peak pulse power dissipation: 1.5kW, Max. off-state voltage: 10V, Semiconductor structure: unidirectional, Max. forward impulse current: 88.2A, кількість в упаковці: 1 шт.
Інші пропозиції SMCJ10AHE3/57T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SMCJ10AHE3/57T | Виробник : VISHAY |
 Category: Unidirectional SMD transil diodesDescription: Diode: TVS; 1.5kW; 11.1V; 88.2A; unidirectional; SMC; reel,tape Breakdown voltage: 11.1V Leakage current: 5µA Mounting: SMD Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: glass passivated Manufacturer series: SMCJ Technology: TransZorb® Case: SMC Peak pulse power dissipation: 1.5kW Max. off-state voltage: 10V Semiconductor structure: unidirectional Max. forward impulse current: 88.2A кількість в упаковці: 1 шт |
товар відсутній |
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SMCJ10AHE3/57T | Виробник : Vishay Semiconductors |
ESD Suppressors / TVS Diodes 1.5KW 10V 5% Unidir AEC-Q101 Qualified |
товар відсутній |
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SMCJ10AHE3/57T | Виробник : VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 11.1V; 88.2A; unidirectional; SMC; reel,tape Breakdown voltage: 11.1V Leakage current: 5µA Mounting: SMD Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: glass passivated Manufacturer series: SMCJ Technology: TransZorb® Case: SMC Peak pulse power dissipation: 1.5kW Max. off-state voltage: 10V Semiconductor structure: unidirectional Max. forward impulse current: 88.2A |
товар відсутній |