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SMBJ8.5CD-M3/H Vishay General Semiconductor - Diodes Division
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Description: TVS DIODE 8.5VWM 14.3VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 42.2A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.57V
Voltage - Clamping (Max) @ Ipp: 14.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
750+ | 15.47 грн |
1500+ | 11.18 грн |
2250+ | 10.24 грн |
5250+ | 9.07 грн |
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Технічний опис SMBJ8.5CD-M3/H Vishay General Semiconductor - Diodes Division
Category: Bidirectional SMD transil diodes, Description: Diode: TVS; 600W; 9.57V; 42.2A; bidirectional; SMB; reel,tape; SMBJ, Type of diode: TVS, Peak pulse power dissipation: 0.6kW, Max. off-state voltage: 8.5V, Breakdown voltage: 9.57V, Max. forward impulse current: 42.2A, Semiconductor structure: bidirectional, Case: SMB, Mounting: SMD, Leakage current: 15µA, Kind of package: reel; tape, Features of semiconductor devices: glass passivated, Technology: TransZorb®, Manufacturer series: SMBJ, кількість в упаковці: 1 шт.
Інші пропозиції SMBJ8.5CD-M3/H за ціною від 19.31 грн до 36.49 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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SMBJ8.5CD-M3/H | Виробник : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 42.2A Voltage - Reverse Standoff (Typ): 8.5V Supplier Device Package: DO-214AA (SMBJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 9.57V Voltage - Clamping (Max) @ Ipp: 14.3V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
на замовлення 7937 шт: термін постачання 21-31 дні (днів) |
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SMBJ8.5CD-M3/H | Виробник : VISHAY |
![]() Description: Diode: TVS; 600W; 9.57V; 42.2A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8.5V Breakdown voltage: 9.57V Max. forward impulse current: 42.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 15µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ кількість в упаковці: 1 шт |
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SMBJ8.5CD-M3/H | Виробник : Vishay |
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SMBJ8.5CD-M3/H | Виробник : Vishay General Semiconductor |
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товар відсутній |
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SMBJ8.5CD-M3/H | Виробник : VISHAY |
![]() Description: Diode: TVS; 600W; 9.57V; 42.2A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8.5V Breakdown voltage: 9.57V Max. forward impulse current: 42.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 15µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
товар відсутній |