SMA4F12AH TAIWAN SEMICONDUCTOR
Виробник: TAIWAN SEMICONDUCTORCategory: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 13.4÷14.8V; 20.5A; unidirectional; ±5%; SMA flat
Mounting: SMD
Case: SMA flat
Kind of package: reel; tape
Max. forward impulse current: 20.5A
Breakdown voltage: 13.4...14.8V
Leakage current: 1µA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Tolerance: ±5%
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
кількість в упаковці: 1 шт
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Технічний опис SMA4F12AH TAIWAN SEMICONDUCTOR
Description: 400W, 14.1V, 5%, UNIDIRECTIONAL,, Packaging: Tape & Reel (TR), Package / Case: DO-221AC, SMA Flat Leads, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Current - Peak Pulse (10/1000µs): 20.5A, Voltage - Reverse Standoff (Typ): 12V, Supplier Device Package: Thin SMA, Unidirectional Channels: 1, Voltage - Breakdown (Min): 13.4V, Voltage - Clamping (Max) @ Ipp: 19.5V, Power - Peak Pulse: 400W, Power Line Protection: No, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції SMA4F12AH
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SMA4F12AH | Виробник : Taiwan Semiconductor Corporation |
Description: 400W, 14.1V, 5%, UNIDIRECTIONAL, Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 20.5A Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: Thin SMA Unidirectional Channels: 1 Voltage - Breakdown (Min): 13.4V Voltage - Clamping (Max) @ Ipp: 19.5V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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| SMA4F12AH | Виробник : TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 13.4÷14.8V; 20.5A; unidirectional; ±5%; SMA flat Mounting: SMD Case: SMA flat Kind of package: reel; tape Max. forward impulse current: 20.5A Breakdown voltage: 13.4...14.8V Leakage current: 1µA Type of diode: TVS Peak pulse power dissipation: 0.4kW Tolerance: ±5% Max. off-state voltage: 12V Semiconductor structure: unidirectional |
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