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SKIM301MLI12E4 23918880 SEMIKRON DANFOSS


SKIM301MLI12E4.pdf Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 1.2kV; Ic: 300A; SKiM4; screw
Electrical mounting: screw
Mechanical mounting: screw
Application: for UPS; frequency changer; Inverter; photovoltaics
Type of module: IGBT
Topology: NTC thermistor; three-level inverter; single-phase
Case: SKiM4
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 900A
кількість в упаковці: 1 шт
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Технічний опис SKIM301MLI12E4 23918880 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; Urmax: 1.2kV; Ic: 300A; SKiM4; screw, Electrical mounting: screw, Mechanical mounting: screw, Application: for UPS; frequency changer; Inverter; photovoltaics, Type of module: IGBT, Topology: NTC thermistor; three-level inverter; single-phase, Case: SKiM4, Max. off-state voltage: 1.2kV, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 300A, Pulsed collector current: 900A, кількість в упаковці: 1 шт.

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SKIM301MLI12E4 23918880 Виробник : SEMIKRON DANFOSS SKIM301MLI12E4.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 1.2kV; Ic: 300A; SKiM4; screw
Electrical mounting: screw
Mechanical mounting: screw
Application: for UPS; frequency changer; Inverter; photovoltaics
Type of module: IGBT
Topology: NTC thermistor; three-level inverter; single-phase
Case: SKiM4
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 900A
товар відсутній