SK830321KL

SK830321KL Panasonic Electronic Components


SK830321_E.pdf Виробник: Panasonic Electronic Components
Description: MOSFET N-CH 30V 7A/18A 8HSSO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 3V @ 519µA
Supplier Device Package: HSSO8-F3-B
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 658 pF @ 10 V
на замовлення 4979 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+40.69 грн
10+ 33.93 грн
100+ 23.46 грн
500+ 18.4 грн
1000+ 15.66 грн
2000+ 13.95 грн
Мінімальне замовлення: 8
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Технічний опис SK830321KL Panasonic Electronic Components

Description: MOSFET N-CH 30V 7A/18A 8HSSO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 4.5A, 10V, Power Dissipation (Max): 2W (Ta), 13W (Tc), Vgs(th) (Max) @ Id: 3V @ 519µA, Supplier Device Package: HSSO8-F3-B, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 658 pF @ 10 V.

Інші пропозиції SK830321KL

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Ціна без ПДВ
SK830321KL SK830321KL Виробник : Panasonic Electronic Components SK830321_E.pdf Description: MOSFET N-CH 30V 7A/18A 8HSSO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 3V @ 519µA
Supplier Device Package: HSSO8-F3-B
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 658 pF @ 10 V
товару немає в наявності
SK830321KL SK830321KL Виробник : Panasonic SK830321_E.pdf MOSFET 30V Dual N-ch Power MOSFET 3.3x3.25mm
товару немає в наявності