SIZF920DT-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET DL N-CH 30V POWERPAIR 6X5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 5230pF @ 15V
Rds On (Max) @ Id, Vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 125nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
Description: MOSFET DL N-CH 30V POWERPAIR 6X5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 5230pF @ 15V
Rds On (Max) @ Id, Vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 125nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
на замовлення 2211 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 144.98 грн |
10+ | 125.13 грн |
100+ | 100.57 грн |
500+ | 77.55 грн |
1000+ | 64.25 грн |
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Технічний опис SIZF920DT-T1-GE3 Vishay Siliconix
Description: MOSFET DL N-CH 30V POWERPAIR 6X5, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Schottky, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 5230pF @ 15V, Rds On (Max) @ Id, Vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 125nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA, Supplier Device Package: 8-PowerPair® (6x5), Part Status: Active.
Інші пропозиції SIZF920DT-T1-GE3 за ціною від 101.58 грн до 162.95 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SIZF920DT-T1-GE3 | Виробник : Vishay / Siliconix | MOSFET Dual 30V Vds PowerPAIR 6x5F |
на замовлення 11386 шт: термін постачання 21-30 дні (днів) |
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SIZF920DT-T1-GE3 | Виробник : Vishay | Trans MOSFET N-CH 30V 28A/49A 8-Pin PowerPAIR EP T/R |
товар відсутній |
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SIZF920DT-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET DL N-CH 30V POWERPAIR 6X5 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 5230pF @ 15V Rds On (Max) @ Id, Vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 125nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active |
товар відсутній |