SISS02DN-T1-GE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: MOSFET N-CH 25V 51A/80A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4450 pF @ 10 V
на замовлення 2988 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 101.77 грн |
| 10+ | 80.22 грн |
| 100+ | 62.39 грн |
| 500+ | 49.63 грн |
| 1000+ | 40.43 грн |
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Технічний опис SISS02DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 25V 51A/80A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V, Power Dissipation (Max): 5W (Ta), 65.7W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +16V, -12V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4450 pF @ 10 V.
Інші пропозиції SISS02DN-T1-GE3 за ціною від 39.79 грн до 110.58 грн
| Фото | Назва | Виробник | Інформація |
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SISS02DN-T1-GE3 | Виробник : Vishay Semiconductors |
MOSFET 25V Vds 16V Vgs PowerPAK 1212-8S |
на замовлення 8726 шт: термін постачання 21-30 дні (днів) |
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| SISS02DN-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 80A; Idm: 300A; 42W Technology: TrenchFET® Mounting: SMD Case: PowerPAK® 1212-8 Kind of package: reel; tape Power dissipation: 42W Pulsed drain current: 300A Gate charge: 83nC Polarisation: unipolar Drain current: 80A Kind of channel: enhanced Drain-source voltage: 25V Type of transistor: N-MOSFET Gate-source voltage: -12...16V On-state resistance: 1.83mΩ кількість в упаковці: 1 шт |
товар відсутній |
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SISS02DN-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 25V 51A/80A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -12V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4450 pF @ 10 V |
товар відсутній |
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| SISS02DN-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 80A; Idm: 300A; 42W Technology: TrenchFET® Mounting: SMD Case: PowerPAK® 1212-8 Kind of package: reel; tape Power dissipation: 42W Pulsed drain current: 300A Gate charge: 83nC Polarisation: unipolar Drain current: 80A Kind of channel: enhanced Drain-source voltage: 25V Type of transistor: N-MOSFET Gate-source voltage: -12...16V On-state resistance: 1.83mΩ |
товар відсутній |