SIS4634LDN-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 18.22 грн |
6000+ | 16.62 грн |
Відгуки про товар
Написати відгук
Технічний опис SIS4634LDN-T1-GE3 Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 8A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V, Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V.
Інші пропозиції SIS4634LDN-T1-GE3 за ціною від 18.49 грн до 48.07 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SIS4634LDN-T1-GE3 | Виробник : Vishay Siliconix |
Description: N-CHANNEL 60 V (D-S) MOSFET POWE Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 8A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
SIS4634LDN-T1-GE3 | Виробник : Vishay / Siliconix | MOSFET Automotive N-Channel 30 V (D-S) 175C MOSFET SOT-23, 24 mohm a. 10V, 32 mohm a. 4.5V |
товар відсутній |