SIRB40DP-T1-GE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: MOSFET 2 N-CH 40V POWERPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 20V
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
на замовлення 2287 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 105.54 грн |
| 10+ | 91.03 грн |
| 100+ | 71.01 грн |
| 500+ | 55.05 грн |
| 1000+ | 43.46 грн |
Відгуки про товар
Написати відгук
Технічний опис SIRB40DP-T1-GE3 Vishay Siliconix
Description: MOSFET 2 N-CH 40V POWERPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 46.2W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 20V, Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual, Part Status: Active.
Інші пропозиції SIRB40DP-T1-GE3 за ціною від 57.43 грн до 116.27 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SIRB40DP-T1-GE3 | Виробник : Vishay Semiconductors |
MOSFET 40V Vds 20V Vgs PowerPAK SO-8 |
на замовлення 36250 шт: термін постачання 638-647 дні (днів) |
|
||||||||||
| SIRB40DP-T1-GE3 | Виробник : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 40A; Idm: 100A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Pulsed drain current: 100A Power dissipation: 29.6W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 93nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||
|
|
SIRB40DP-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2 N-CH 40V POWERPAK SO8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 46.2W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 20V Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Part Status: Active |
товар відсутній |
|||||||||||
| SIRB40DP-T1-GE3 | Виробник : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 40A; Idm: 100A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Pulsed drain current: 100A Power dissipation: 29.6W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 93nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |