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SIRA88BDP-T1-GE3 Vishay Siliconix
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Description: MOSFET N-CH 30V 19A/40A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 14.54 грн |
6000+ | 13.1 грн |
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Технічний опис SIRA88BDP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 19A/40A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V, Power Dissipation (Max): 3.8W (Ta), 17W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V.
Інші пропозиції SIRA88BDP-T1-GE3 за ціною від 11.74 грн до 42.39 грн
Фото | Назва | Виробник | Інформація |
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SIRA88BDP-T1-GE3 | Виробник : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 17W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SIRA88BDP-T1-GE3 | Виробник : Vishay / Siliconix |
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на замовлення 6083 шт: термін постачання 21-30 дні (днів) |
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SIRA88BDP-T1-GE3 | Виробник : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 32A; Idm: 90A; 11W Drain-source voltage: 30V Drain current: 32A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 11W Polarisation: unipolar Kind of package: reel; tape Case: PowerPAK® SO8 Gate charge: 19nC Mounting: SMD Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: -16...20V Pulsed drain current: 90A кількість в упаковці: 1 шт |
товар відсутній |
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SIRA88BDP-T1-GE3 | Виробник : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 32A; Idm: 90A; 11W Drain-source voltage: 30V Drain current: 32A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 11W Polarisation: unipolar Kind of package: reel; tape Case: PowerPAK® SO8 Gate charge: 19nC Mounting: SMD Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: -16...20V Pulsed drain current: 90A |
товар відсутній |