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SIR873DP-T1-GE3 Vishay Semiconductors
на замовлення 16402 шт:
термін постачання 570-579 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 117.89 грн |
10+ | 96.98 грн |
100+ | 66.76 грн |
250+ | 62.03 грн |
500+ | 56.24 грн |
1000+ | 48.23 грн |
3000+ | 45.86 грн |
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Технічний опис SIR873DP-T1-GE3 Vishay Semiconductors
Description: MOSFET P-CH 150V 37A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), Rds On (Max) @ Id, Vgs: 47.5mOhm @ 10A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 75 V.
Інші пропозиції SIR873DP-T1-GE3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SIR873DP-T1-GE3 | Виробник : Vishay |
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товар відсутній |
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SIR873DP-T1-GE3 | Виробник : Vishay |
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товар відсутній |
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SIR873DP-T1-GE3 | Виробник : VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -150V; -37A; Idm: 50A; 66.6W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -150V Drain current: -37A Pulsed drain current: 50A Power dissipation: 66.6W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 47.5mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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![]() |
SIR873DP-T1-GE3 | Виробник : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 47.5mOhm @ 10A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 75 V |
товар відсутній |
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SIR873DP-T1-GE3 | Виробник : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 47.5mOhm @ 10A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 75 V |
товар відсутній |
|
SIR873DP-T1-GE3 | Виробник : VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -150V; -37A; Idm: 50A; 66.6W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -150V Drain current: -37A Pulsed drain current: 50A Power dissipation: 66.6W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 47.5mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |