SIJH5700E-T1-GE3 Vishay Semiconductors
на замовлення 5460 шт:
термін постачання 811-820 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 474.83 грн |
| 10+ | 392.71 грн |
| 25+ | 322.67 грн |
| 100+ | 276.67 грн |
| 250+ | 261.34 грн |
| 500+ | 245.31 грн |
| 1000+ | 210.47 грн |
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Технічний опис SIJH5700E-T1-GE3 Vishay Semiconductors
Description: N-CHANNEL 150 V (D-S) 175C MOSFE, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 8 x 8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 174A (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V, Power Dissipation (Max): 3.3W (Ta), 333W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 75 V.
Інші пропозиції SIJH5700E-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SIJH5700E-T1-GE3 | Виробник : Vishay |
 Trans MOSFET N-CH 150V 17A T/R |
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SIJH5700E-T1-GE3 | Виробник : Vishay Siliconix |
Description: N-CHANNEL 150 V (D-S) 175C MOSFE Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 174A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 75 V |
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SIJH5700E-T1-GE3 | Виробник : Vishay Siliconix |
Description: N-CHANNEL 150 V (D-S) 175C MOSFE Packaging: Cut Tape (CT) Package / Case: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 174A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 75 V |
товар відсутній |