![SIHP28N65EF-GE3 SIHP28N65EF-GE3](https://www.mouser.com/images/mouserelectronics/lrg/TO_220_AB_3_SPL.jpg)
на замовлення 945 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 473.96 грн |
10+ | 392.02 грн |
25+ | 321.91 грн |
100+ | 275.52 грн |
250+ | 260.76 грн |
500+ | 246 грн |
1000+ | 215.78 грн |
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Технічний опис SIHP28N65EF-GE3 Vishay / Siliconix
Description: MOSFET N-CH 650V 28A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 117mOhm @ 14A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3249 pF @ 100 V.
Інші пропозиції SIHP28N65EF-GE3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SIHP28N65EF-GE3 | Виробник : Vishay |
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товар відсутній |
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SIHP28N65EF-GE3 | Виробник : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 18A; Idm: 87A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Pulsed drain current: 87A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.117Ω Mounting: THT Gate charge: 146nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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SIHP28N65EF-GE3 | Виробник : Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 117mOhm @ 14A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3249 pF @ 100 V |
товар відсутній |
|
SIHP28N65EF-GE3 | Виробник : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 18A; Idm: 87A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Pulsed drain current: 87A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.117Ω Mounting: THT Gate charge: 146nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |