SIHP28N65E-GE3 VISHAY
Виробник: VISHAY
Description: VISHAY - SIHP28N65E-GE3 - Leistungs-MOSFET, n-Kanal, 650 V, 29 A, 0.097 ohm, TO-220AB, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 29A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 250W
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pin(s)
Produktpalette: E Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.097ohm
SVHC: No SVHC (17-Jan-2022)
Description: VISHAY - SIHP28N65E-GE3 - Leistungs-MOSFET, n-Kanal, 650 V, 29 A, 0.097 ohm, TO-220AB, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 29A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 250W
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pin(s)
Produktpalette: E Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.097ohm
SVHC: No SVHC (17-Jan-2022)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
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Технічний опис SIHP28N65E-GE3 VISHAY
Description: VISHAY - SIHP28N65E-GE3 - Leistungs-MOSFET, n-Kanal, 650 V, 29 A, 0.097 ohm, TO-220AB, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 650V, rohsCompliant: YES, Dauer-Drainstrom Id: 29A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 4V, euEccn: NLR, Verlustleistung: 250W, Bauform - Transistor: TO-220AB, Anzahl der Pins: 3Pin(s), Produktpalette: E Series, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.097ohm, SVHC: No SVHC (17-Jan-2022).
Інші пропозиції SIHP28N65E-GE3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SIHP28N65E-GE3 | Виробник : Vishay | Trans MOSFET N-CH 650V 29A 3-Pin(3+Tab) TO-220AB |
товар відсутній |
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SIHP28N65E-GE3 | Виробник : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 18A; Idm: 87A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Pulsed drain current: 87A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 112mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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SIHP28N65E-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 650V 29A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 112mOhm @ 14A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3405 pF @ 100 V |
товар відсутній |
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SIHP28N65E-GE3 | Виробник : Vishay / Siliconix | MOSFETs 650V Vds 30V Vgs TO-220AB |
товар відсутній |
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SIHP28N65E-GE3 | Виробник : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 18A; Idm: 87A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Pulsed drain current: 87A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 112mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced |
товар відсутній |