SIHLZ44S-GE3 VISHAY
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 150W
Case: D2PAK; TO263
Mounting: SMD
Kind of package: tube
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 66nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 200A
Drain-source voltage: 60V
Drain current: 36A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 150W
Case: D2PAK; TO263
Mounting: SMD
Kind of package: tube
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 66nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 200A
Drain-source voltage: 60V
Drain current: 36A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
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Технічний опис SIHLZ44S-GE3 VISHAY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 150W, Case: D2PAK; TO263, Mounting: SMD, Kind of package: tube, Power dissipation: 150W, Polarisation: unipolar, Gate charge: 66nC, Kind of channel: enhanced, Gate-source voltage: ±10V, Pulsed drain current: 200A, Drain-source voltage: 60V, Drain current: 36A, On-state resistance: 39mΩ, Type of transistor: N-MOSFET, кількість в упаковці: 1 шт.
Інші пропозиції SIHLZ44S-GE3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SIHLZ44S-GE3 | Виробник : Vishay / Siliconix | MOSFETs |
товар відсутній |
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SIHLZ44S-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 150W Case: D2PAK; TO263 Mounting: SMD Kind of package: tube Power dissipation: 150W Polarisation: unipolar Gate charge: 66nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 200A Drain-source voltage: 60V Drain current: 36A On-state resistance: 39mΩ Type of transistor: N-MOSFET |
товар відсутній |