Технічний опис SIHL640STRL-GE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W, Case: D2PAK; TO263, Mounting: SMD, Power dissipation: 125W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 66nC, Kind of channel: enhanced, Gate-source voltage: ±10V, Pulsed drain current: 68A, Drain-source voltage: 200V, Drain current: 11A, On-state resistance: 0.27Ω, Type of transistor: N-MOSFET, кількість в упаковці: 1 шт.
Інші пропозиції SIHL640STRL-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SIHL640STRL-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W Case: D2PAK; TO263 Mounting: SMD Power dissipation: 125W Polarisation: unipolar Kind of package: reel; tape Gate charge: 66nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 68A Drain-source voltage: 200V Drain current: 11A On-state resistance: 0.27Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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| SIHL640STRL-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W Case: D2PAK; TO263 Mounting: SMD Power dissipation: 125W Polarisation: unipolar Kind of package: reel; tape Gate charge: 66nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 68A Drain-source voltage: 200V Drain current: 11A On-state resistance: 0.27Ω Type of transistor: N-MOSFET |
товар відсутній |