Технічний опис SIHL510STRL-GE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 18A; 43W; D2PAK,TO263, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 4A, Pulsed drain current: 18A, Power dissipation: 43W, Case: D2PAK; TO263, Gate-source voltage: ±10V, On-state resistance: 760mΩ, Mounting: SMD, Gate charge: 6.1nC, Kind of package: reel; tape, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції SIHL510STRL-GE3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SIHL510STRL-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 18A; 43W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4A Pulsed drain current: 18A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 760mΩ Mounting: SMD Gate charge: 6.1nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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SIHL510STRL-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 18A; 43W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4A Pulsed drain current: 18A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 760mΩ Mounting: SMD Gate charge: 6.1nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |