![SiHH11N65EF-T1-GE3 SiHH11N65EF-T1-GE3](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/4955/742;6041;;8.jpg)
SiHH11N65EF-T1-GE3 Vishay Siliconix
![sihh11n65ef.pdf](/images/adobe-acrobat.png)
Description: MOSFET N-CH 650V 11A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 382mOhm @ 6A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1243 pF @ 100 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 306.4 грн |
Відгуки про товар
Написати відгук
Технічний опис SiHH11N65EF-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 650V 11A PPAK 8 X 8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 382mOhm @ 6A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1243 pF @ 100 V.
Інші пропозиції SiHH11N65EF-T1-GE3 за ціною від 144.09 грн до 323.9 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
SiHH11N65EF-T1-GE3 | Виробник : Vishay / Siliconix |
![]() |
на замовлення 2965 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
SIHH11N65EF-T1-GE3 | Виробник : Vishay |
![]() |
товар відсутній |
|||||||||||||||||
SiHH11N65EF-T1-GE3 | Виробник : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 27A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Pulsed drain current: 27A Power dissipation: 130W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 382mΩ Mounting: SMD Gate charge: 70nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||||||
![]() |
SiHH11N65EF-T1-GE3 | Виробник : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 382mOhm @ 6A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1243 pF @ 100 V |
товар відсутній |
|||||||||||||||||
SiHH11N65EF-T1-GE3 | Виробник : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 27A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Pulsed drain current: 27A Power dissipation: 130W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 382mΩ Mounting: SMD Gate charge: 70nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |