![SIHG80N60E-GE3 SIHG80N60E-GE3](https://www.mouser.com/images/mouserelectronics/lrg/TO_247_3_t.jpg)
на замовлення 1654 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 877.4 грн |
10+ | 762.21 грн |
25+ | 626.95 грн |
50+ | 608.67 грн |
100+ | 572.83 грн |
250+ | 555.26 грн |
500+ | 540.5 грн |
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Технічний опис SIHG80N60E-GE3 Vishay / Siliconix
Description: MOSFET N-CH 600V 80A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 443 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 100 V.
Інші пропозиції SIHG80N60E-GE3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SIHG80N60E-GE3 | Виробник : Vishay |
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товар відсутній |
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SIHG80N60E-GE3 | Виробник : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 268A; 520W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 51A Pulsed drain current: 268A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 30mΩ Mounting: THT Gate charge: 443nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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SIHG80N60E-GE3 | Виробник : Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 443 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 100 V |
товар відсутній |
|
SIHG80N60E-GE3 | Виробник : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 268A; 520W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 51A Pulsed drain current: 268A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 30mΩ Mounting: THT Gate charge: 443nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |