SIHFR9024TR-GE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: MOSFET P-CH 60V 8.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
на замовлення 776 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 69.86 грн |
| 10+ | 45.24 грн |
| 100+ | 31.25 грн |
| 500+ | 23.42 грн |
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Технічний опис SIHFR9024TR-GE3 Vishay Siliconix
Description: MOSFET P-CH 60V 8.8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V.
Інші пропозиції SIHFR9024TR-GE3 за ціною від 20.3 грн до 76.26 грн
| Фото | Назва | Виробник | Інформація |
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SIHFR9024TR-GE3 | Виробник : Vishay / Siliconix |
MOSFETs -60V Vds 20V Vgs DPAK (TO-252) |
на замовлення 2340 шт: термін постачання 21-30 дні (днів) |
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SIHFR9024TR-GE3 | Виробник : Vishay |
Trans MOSFET P-CH 60V 8.8A 3-Pin(2+Tab) DPAK T/R |
товару немає в наявності |
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| SIHFR9024TR-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W Mounting: SMD Power dissipation: 42W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -35A Case: DPAK; TO252 Drain-source voltage: -60V Drain current: -5.6A On-state resistance: 0.28Ω Type of transistor: P-MOSFET кількість в упаковці: 1 шт |
товару немає в наявності |
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SIHFR9024TR-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 60V 8.8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V |
товару немає в наявності |
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| SIHFR9024TR-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W Mounting: SMD Power dissipation: 42W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -35A Case: DPAK; TO252 Drain-source voltage: -60V Drain current: -5.6A On-state resistance: 0.28Ω Type of transistor: P-MOSFET |
товару немає в наявності |