Технічний опис SIHFR430ATR-GE3 Vishay
Description: MOSFET N-CH 500V 5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V.
Інші пропозиції SIHFR430ATR-GE3
Фото | Назва | Виробник | Інформація |
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SIHFR430ATR-GE3 | Виробник : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 3.2A; Idm: 20A; 110W Mounting: SMD Case: DPAK; TO252 Kind of package: reel; tape Power dissipation: 110W Polarisation: unipolar Gate charge: 24nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 20A Drain-source voltage: 500V Drain current: 3.2A On-state resistance: 1.7Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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SIHFR430ATR-GE3 | Виробник : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V |
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SIHFR430ATR-GE3 | Виробник : Vishay / Siliconix |
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товар відсутній |
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SIHFR430ATR-GE3 | Виробник : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 3.2A; Idm: 20A; 110W Mounting: SMD Case: DPAK; TO252 Kind of package: reel; tape Power dissipation: 110W Polarisation: unipolar Gate charge: 24nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 20A Drain-source voltage: 500V Drain current: 3.2A On-state resistance: 1.7Ω Type of transistor: N-MOSFET |
товар відсутній |