Технічний опис SIHFR430A-GE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 3.2A; Idm: 20A; 110W, Mounting: SMD, Case: DPAK; TO252, Kind of package: reel; tape, Power dissipation: 110W, Polarisation: unipolar, Gate charge: 24nC, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 20A, Drain-source voltage: 500V, Drain current: 3.2A, On-state resistance: 1.7Ω, Type of transistor: N-MOSFET, кількість в упаковці: 1 шт.
Інші пропозиції SIHFR430A-GE3
| Фото | Назва | Виробник | Інформація |
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| SIHFR430A-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.2A; Idm: 20A; 110W Mounting: SMD Case: DPAK; TO252 Kind of package: reel; tape Power dissipation: 110W Polarisation: unipolar Gate charge: 24nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 20A Drain-source voltage: 500V Drain current: 3.2A On-state resistance: 1.7Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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SIHFR430A-GE3 | Виробник : Vishay / Siliconix | MOSFET |
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| SIHFR430A-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.2A; Idm: 20A; 110W Mounting: SMD Case: DPAK; TO252 Kind of package: reel; tape Power dissipation: 110W Polarisation: unipolar Gate charge: 24nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 20A Drain-source voltage: 500V Drain current: 3.2A On-state resistance: 1.7Ω Type of transistor: N-MOSFET |
товар відсутній |