Технічний опис SIHFR420A-GE3 Vishay
Description: MOSFET N-CH 500V 3.3A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V.
Інші пропозиції SIHFR420A-GE3
Фото | Назва | Виробник | Інформація |
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SIHFR420A-GE3 | Виробник : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 10A; 83W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.1A Pulsed drain current: 10A Power dissipation: 83W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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SIHFR420A-GE3 | Виробник : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V |
товар відсутній |
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SIHFR420A-GE3 | Виробник : Vishay / Siliconix |
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товар відсутній |
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SIHFR420A-GE3 | Виробник : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 10A; 83W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.1A Pulsed drain current: 10A Power dissipation: 83W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |