Технічний опис SIHF740STRL-GE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 400V, Drain current: 6.3A, Pulsed drain current: 40A, Power dissipation: 125W, Case: D2PAK; TO263, Gate-source voltage: ±20V, On-state resistance: 0.55Ω, Mounting: SMD, Gate charge: 63nC, Kind of package: reel; tape, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції SIHF740STRL-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| SIHF740STRL-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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SIHF740STRL-GE3 | Виробник : Vishay / Siliconix | MOSFET |
товар відсутній |
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| SIHF740STRL-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |