SIHF740AL-GE3 VISHAY
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис SIHF740AL-GE3 VISHAY
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 400V, Drain current: 6.3A, Pulsed drain current: 40A, Power dissipation: 125W, Case: I2PAK; TO262, Gate-source voltage: ±30V, On-state resistance: 0.55Ω, Mounting: THT, Gate charge: 36nC, Kind of package: tube, Kind of channel: enhanced, кількість в упаковці: 1 шт.
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SIHF740AL-GE3 | Виробник : Vishay / Siliconix | MOSFET |
товар відсутній |
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SIHF740AL-GE3 | Виробник : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced |
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