Технічний опис SIHF6N40D-E3 Vishay
Description: MOSFET N-CH 400V 6A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220 Full Pack, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 100 V.
Інші пропозиції SIHF6N40D-E3
| Фото | Назва | Виробник | Інформація |
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SIHF6N40D-E3 | Виробник : Vishay |
 Trans MOSFET N-CH 400V 6A 3-Pin(3+Tab) TO-220FP |
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| SIHF6N40D-E3 | Виробник : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 4A; Idm: 13A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 4A Pulsed drain current: 13A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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SIHF6N40D-E3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 400V 6A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 100 V |
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SIHF6N40D-E3 | Виробник : Vishay / Siliconix |
MOSFET 400V Vds 30V Vgs TO-220 FULLPAK |
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| SIHF6N40D-E3 | Виробник : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 4A; Idm: 13A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 4A Pulsed drain current: 13A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhanced |
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