Технічний опис SIHF22N60E-E3
Description: MOSFET N-CH 600V 21A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220 Full Pack, Part Status: Active, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V.
Інші пропозиції SIHF22N60E-E3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SIHF22N60E-E3 | Виробник : Vishay | Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220FP |
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SIHF22N60E-E3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 600V 21A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V |
товар відсутній |
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SIHF22N60E-E3 | Виробник : Vishay / Siliconix | MOSFETs RECOMMENDED ALT SIR462DP-T1-GE3 |
товар відсутній |