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SIHD1K4N60E-GE3 Vishay / Siliconix
на замовлення 2309 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
5+ | 75.52 грн |
10+ | 59.57 грн |
100+ | 47.02 грн |
1000+ | 30.86 грн |
3000+ | 29.38 грн |
6000+ | 28.54 грн |
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Технічний опис SIHD1K4N60E-GE3 Vishay / Siliconix
Description: MOSFET N-CH 600V 4.2A TO252AA, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc), Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 100 V.
Інші пропозиції SIHD1K4N60E-GE3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SIHD1K4N60E-GE3 | Виробник : Vishay |
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товар відсутній |
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SIHD1K4N60E-GE3 | Виробник : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 5A; 63W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.6A Pulsed drain current: 5A Power dissipation: 63W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 1.45Ω Mounting: SMD Gate charge: 7.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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SIHD1K4N60E-GE3 | Виробник : Vishay Siliconix |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 100 V |
товар відсутній |
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SIHD1K4N60E-GE3 | Виробник : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 5A; 63W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.6A Pulsed drain current: 5A Power dissipation: 63W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 1.45Ω Mounting: SMD Gate charge: 7.5nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |