SIDR390DP-T1-GE3 Vishay Semiconductors
на замовлення 1206 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 149.6 грн |
| 10+ | 126.63 грн |
| 100+ | 91.99 грн |
| 250+ | 88.51 грн |
| 500+ | 80.14 грн |
| 1000+ | 71.78 грн |
| 3000+ | 69.34 грн |
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Технічний опис SIDR390DP-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 30V 69.9A/100A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V, Power Dissipation (Max): 6.25W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerPAK® SO-8DC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V.
Інші пропозиції SIDR390DP-T1-GE3 за ціною від 72.16 грн до 168.11 грн
| Фото | Назва | Виробник | Інформація |
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SIDR390DP-T1-GE3 | Виробник : Vishay Siliconix |
 Description: MOSFET N-CH 30V 69.9A/100A PPAKPackaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V |
на замовлення 1987 шт: термін постачання 21-31 дні (днів) |
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| SIDR390DP-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Gate charge: 153nC Technology: TrenchFET® Kind of channel: enhanced Pulsed drain current: 400A Drain-source voltage: 30V Drain current: 100A On-state resistance: 1.15mΩ кількість в упаковці: 3000 шт |
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SIDR390DP-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 30V 69.9A/100A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V |
товар відсутній |
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| SIDR390DP-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Gate charge: 153nC Technology: TrenchFET® Kind of channel: enhanced Pulsed drain current: 400A Drain-source voltage: 30V Drain current: 100A On-state resistance: 1.15mΩ |
товар відсутній |