SICW080N120Y4-BP Micro Commercial Co
Виробник: Micro Commercial Co
Description: N-CHANNEL MOSFET,TO-247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A
Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 18V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 1000 V
Description: N-CHANNEL MOSFET,TO-247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A
Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 18V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 1000 V
на замовлення 338 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 1170.77 грн |
10+ | 993.53 грн |
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Технічний опис SICW080N120Y4-BP Micro Commercial Co
Description: N-CHANNEL MOSFET,TO-247-4, Packaging: Bulk, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A, Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 18V, Power Dissipation (Max): 223W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 5mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 1000 V.
Інші пропозиції SICW080N120Y4-BP
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
SICW080N120Y4-BP | Виробник : Micro Commercial Components | Trans MOSFET N-CH SiC 1.2KV 39A 4-Pin(4+Tab) TO-247 Tube |
товару немає в наявності |
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SICW080N120Y4-BP | Виробник : Micro Commercial Components (MCC) | MOSFET N-CHANNEL MOSFET,TO-247-4 |
товару немає в наявності |