SI8425DB-T1-E1 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (1.6x1.6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Description: MOSFET P-CH 20V 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (1.6x1.6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 15.24 грн |
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Технічний опис SI8425DB-T1-E1 Vishay Siliconix
Description: VISHAY - SI8425DB-T1-E1 - Leistungs-MOSFET, p-Kanal, 20 V, 9.3 A, 0.018 ohm, MICRO FOOT, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 20V, rohsCompliant: YES, Dauer-Drainstrom Id: 9.3A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 900mV, euEccn: NLR, Verlustleistung: 2.7W, Bauform - Transistor: MICRO FOOT, Anzahl der Pins: 4Pin(s), Produktpalette: TrenchFET, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 4.5V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.018ohm, SVHC: No SVHC (23-Jan-2024).
Інші пропозиції SI8425DB-T1-E1 за ціною від 15.33 грн до 39.96 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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SI8425DB-T1-E1 | Виробник : Vishay Semiconductors | MOSFET -20V Vds 10V Vgs MICRO FOOT 1.6 x 1.6 |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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SI8425DB-T1-E1 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 20V 4WLCSP Packaging: Cut Tape (CT) Package / Case: 4-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 2A, 4.5V Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 4-WLCSP (1.6x1.6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V |
на замовлення 3142 шт: термін постачання 21-31 дні (днів) |
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SI8425DB-T1-E1 | Виробник : VISHAY |
Description: VISHAY - SI8425DB-T1-E1 - Leistungs-MOSFET, p-Kanal, 20 V, 9.3 A, 0.018 ohm, MICRO FOOT, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 9.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 900mV euEccn: NLR Verlustleistung: 2.7W Bauform - Transistor: MICRO FOOT Anzahl der Pins: 4Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.018ohm SVHC: No SVHC (23-Jan-2024) |
товар відсутній |
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SI8425DB-T1-E1 | Виробник : VISHAY |
Description: VISHAY - SI8425DB-T1-E1 - Leistungs-MOSFET, p-Kanal, 20 V, 9.3 A, 0.018 ohm, MICRO FOOT, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 9.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 900mV euEccn: NLR Verlustleistung: 2.7W Bauform - Transistor: MICRO FOOT Anzahl der Pins: 4Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.018ohm SVHC: No SVHC (23-Jan-2024) |
товар відсутній |
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SI8425DB-T1-E1 | Виробник : Vishay | Trans MOSFET P-CH 20V 9.3A 4-Pin Micro Foot T/R |
товар відсутній |
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SI8425DB-T1-E1 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9.3A; Idm: -25A Technology: TrenchFET® Mounting: SMD Case: MICROFOOT® 1.6x1.6 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 2.7W On-state resistance: 40mΩ Pulsed drain current: -25A Drain current: -9.3A Polarisation: unipolar Gate charge: 110nC Drain-source voltage: -20V Gate-source voltage: ±10V Type of transistor: P-MOSFET кількість в упаковці: 3000 шт |
товар відсутній |
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SI8425DB-T1-E1 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9.3A; Idm: -25A Technology: TrenchFET® Mounting: SMD Case: MICROFOOT® 1.6x1.6 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 2.7W On-state resistance: 40mΩ Pulsed drain current: -25A Drain current: -9.3A Polarisation: unipolar Gate charge: 110nC Drain-source voltage: -20V Gate-source voltage: ±10V Type of transistor: P-MOSFET |
товар відсутній |