![SI7370ADP-T1-GE3 SI7370ADP-T1-GE3](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/4955/742;5881;DP;8.jpg)
SI7370ADP-T1-GE3 Vishay Siliconix
![Si7370ADP.pdf](/images/adobe-acrobat.png)
Description: MOSFET N-CH 60V 50A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V
Power Dissipation (Max): 5.2W (Ta), 69.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 30 V
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис SI7370ADP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 60V 50A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V, Power Dissipation (Max): 5.2W (Ta), 69.4W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 30 V.
Інші пропозиції SI7370ADP-T1-GE3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
![]() |
SI7370ADP-T1-GE3 | Виробник : Vishay / Siliconix |
![]() |
товар відсутній |