SI7223DN-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 30V 6A PPAK 1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 15V
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
Description: MOSFET 2P-CH 30V 6A PPAK 1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 15V
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 26.2 грн |
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Технічний опис SI7223DN-T1-GE3 Vishay Siliconix
Description: VISHAY - SI7223DN-T1-GE3 - Dual-MOSFET, p-Kanal, 30 V, 30 V, 6 A, 6 A, 0.022 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 6A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 30V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 6A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.022ohm, Verlustleistung, p-Kanal: 23W, Drain-Source-Spannung Vds, n-Kanal: 30V, euEccn: NLR, Bauform - Transistor: PowerPAK 1212, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen III Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.022ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Verlustleistung, n-Kanal: 23W, Betriebstemperatur, max.: 150°C, SVHC: To Be Advised.
Інші пропозиції SI7223DN-T1-GE3 за ціною від 23.84 грн до 77.78 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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SI7223DN-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2P-CH 30V 6A PPAK 1212 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta), 23W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 15V Rds On (Max) @ Id, Vgs: 26.4mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual Part Status: Active |
на замовлення 7324 шт: термін постачання 21-31 дні (днів) |
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SI7223DN-T1-GE3 | Виробник : Vishay Semiconductors | MOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 |
на замовлення 25721 шт: термін постачання 21-30 дні (днів) |
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SI7223DN-T1-GE3 | Виробник : VISHAY |
Description: VISHAY - SI7223DN-T1-GE3 - Dual-MOSFET, p-Kanal, 30 V, 30 V, 6 A, 6 A, 0.022 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 6A Drain-Source-Durchgangswiderstand, p-Kanal: 0.022ohm Verlustleistung, p-Kanal: 23W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAK 1212 Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen III Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.022ohm productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 23W Betriebstemperatur, max.: 150°C SVHC: To Be Advised |
на замовлення 7563 шт: термін постачання 21-31 дні (днів) |
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SI7223DN-T1-GE3 | Виробник : Vishay | Trans MOSFET P-CH 30V 6A 8-Pin PowerPAK 1212 EP T/R |
товар відсутній |
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SI7223DN-T1-GE3 | Виробник : VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -6A; Idm: -40A Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -30V Drain current: -6A On-state resistance: 37.2mΩ Type of transistor: P-MOSFET x2 Power dissipation: 23W Polarisation: unipolar Gate charge: 40nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -40A кількість в упаковці: 6000 шт |
товар відсутній |
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SI7223DN-T1-GE3 | Виробник : VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -6A; Idm: -40A Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -30V Drain current: -6A On-state resistance: 37.2mΩ Type of transistor: P-MOSFET x2 Power dissipation: 23W Polarisation: unipolar Gate charge: 40nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -40A |
товар відсутній |