SI7190DP-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 250V 18.4A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc)
Rds On (Max) @ Id, Vgs: 118mOhm @ 4.4A, 10V
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2214 pF @ 125 V
Description: MOSFET N-CH 250V 18.4A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc)
Rds On (Max) @ Id, Vgs: 118mOhm @ 4.4A, 10V
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2214 pF @ 125 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 63.93 грн |
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Технічний опис SI7190DP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 250V 18.4A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc), Rds On (Max) @ Id, Vgs: 118mOhm @ 4.4A, 10V, Power Dissipation (Max): 5.4W (Ta), 96W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2214 pF @ 125 V.
Інші пропозиції SI7190DP-T1-GE3 за ціною від 59.7 грн до 154.69 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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SI7190DP-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 250V 18.4A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc) Rds On (Max) @ Id, Vgs: 118mOhm @ 4.4A, 10V Power Dissipation (Max): 5.4W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2214 pF @ 125 V |
на замовлення 6123 шт: термін постачання 21-31 дні (днів) |
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SI7190DP-T1-GE3 | Виробник : Vishay Semiconductors | MOSFETs 250V Vds 20V Vgs PowerPAK SO-8 |
на замовлення 7684 шт: термін постачання 21-30 дні (днів) |
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SI7190DP-T1-GE3 | Виробник : Vishay | Trans MOSFET N-CH 250V 18.4A 8-Pin PowerPAK SO T/R |
товар відсутній |
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SI7190DP-T1-GE3 | Виробник : Vishay | Trans MOSFET N-CH 250V 18.4A 8-Pin PowerPAK SO T/R |
товар відсутній |
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SI7190DP-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 18.4A; Idm: 30A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 18.4A Pulsed drain current: 30A Power dissipation: 96W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 124mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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SI7190DP-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 18.4A; Idm: 30A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 18.4A Pulsed drain current: 30A Power dissipation: 96W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 124mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |