SI6562CDQ-T1-BE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 20V 5.7A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V, 1200pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 51nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
Description: MOSFET N/P-CH 20V 5.7A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V, 1200pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 51nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 28.83 грн |
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Технічний опис SI6562CDQ-T1-BE3 Vishay Siliconix
Description: MOSFET N/P-CH 20V 5.7A 8TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V, 1200pF @ 10V, Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 51nC @ 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-TSSOP, Part Status: Active.
Інші пропозиції SI6562CDQ-T1-BE3 за ціною від 25.55 грн до 74.69 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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SI6562CDQ-T1-BE3 | Виробник : Vishay Siliconix |
Description: MOSFET N/P-CH 20V 5.7A 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V, 1200pF @ 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 51nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-TSSOP Part Status: Active |
на замовлення 3238 шт: термін постачання 21-31 дні (днів) |
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SI6562CDQ-T1-BE3 | Виробник : Vishay Semiconductors | MOSFET N- AND P-CHANNEL 20-V (D-S) MO |
на замовлення 5925 шт: термін постачання 21-30 дні (днів) |
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