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SI5935CDC-T1-GE3 Vishay Siliconix
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Description: MOSFET 2P-CH 20V 4A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 12.44 грн |
6000+ | 11.37 грн |
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Технічний опис SI5935CDC-T1-GE3 Vishay Siliconix
Description: MOSFET 2P-CH 20V 4A 1206-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V, Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 1206-8 ChipFET™, Part Status: Active.
Інші пропозиції SI5935CDC-T1-GE3 за ціною від 12.58 грн до 47.97 грн
Фото | Назва | Виробник | Інформація |
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SI5935CDC-T1-GE3 | Виробник : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 1206-8 ChipFET™ Part Status: Active |
на замовлення 7348 шт: термін постачання 21-31 дні (днів) |
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SI5935CDC-T1-GE3 | Виробник : Vishay Semiconductors |
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на замовлення 59800 шт: термін постачання 321-330 дні (днів) |
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SI5935CDC-T1-GE3 | Виробник : Vishay |
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товар відсутній |
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SI5935CDC-T1-GE3 | Виробник : VISHAY |
![]() Description: Transistor: P-MOSFET x2; unipolar; -20V; -4A; Idm: -10A; 2W; ChipFET Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -10A Power dissipation: 2W Case: ChipFET Gate-source voltage: ±8V On-state resistance: 100mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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SI5935CDC-T1-GE3 | Виробник : VISHAY |
![]() Description: Transistor: P-MOSFET x2; unipolar; -20V; -4A; Idm: -10A; 2W; ChipFET Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -10A Power dissipation: 2W Case: ChipFET Gate-source voltage: ±8V On-state resistance: 100mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |