Технічний опис SI5905DC-T1-E3 VISHAY
Description: MOSFET 2P-CH 8V 3A 1206-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 8V, Current - Continuous Drain (Id) @ 25°C: 3A, Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 450mV @ 250µA (Min), Supplier Device Package: 1206-8 ChipFET™.
Інші пропозиції SI5905DC-T1-E3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SI5905DC-T1-E3 | Виробник : Vishay |
 Trans MOSFET P-CH 8V 3A 8-Pin Chip FET T/R |
товар відсутній |
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SI5905DC-T1-E3 | Виробник : Vishay Siliconix |
Description: MOSFET 2P-CH 8V 3A 1206-8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Supplier Device Package: 1206-8 ChipFET™ |
товар відсутній |