![SI5618-13P SI5618-13P](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/6152/353%7ESOT23-3%7E%7E3.jpg)
SI5618-13P Micro Commercial Co
![SI5618(SOT-23).pdf](/images/adobe-acrobat.png)
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V
Power Dissipation (Max): 830mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
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Технічний опис SI5618-13P Micro Commercial Co
Description: MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V, Power Dissipation (Max): 830mW, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V.
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SI5618-13P | Виробник : Micro Commercial Components (MCC) |
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