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SI4834CDY-T1-GE3 Vishay Siliconix
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Description: MOSFET 2N-CH 30V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.9W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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Технічний опис SI4834CDY-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.9W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V, Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: 8-SOIC, Part Status: Obsolete.
Інші пропозиції SI4834CDY-T1-GE3
Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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SI4834CDY-T1-GE3 | Виробник : Vishay / Siliconix |
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