Si4228DY-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 12.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 25V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 12.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 24.03 грн |
5000+ | 22.04 грн |
Відгуки про товар
Написати відгук
Технічний опис Si4228DY-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 12.5V, Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Інші пропозиції Si4228DY-T1-GE3 за ціною від 22.03 грн до 58.22 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Si4228DY-T1-GE3 | Виробник : Vishay Semiconductors | MOSFETs 25V Vds 12V Vgs SO-8 |
на замовлення 70896 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||
Si4228DY-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 25V 8A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 12.5V Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 8721 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
Si4228DY-T1-GE3 |
на замовлення 798200 шт: термін постачання 14-28 дні (днів) |
||||||||||||||||||||
SI4228DY-T1-GE3 | Виробник : Vishay | Trans MOSFET N-CH 25V 8A 8-Pin SOIC N T/R |
товар відсутній |
||||||||||||||||||
Si4228DY-T1-GE3 | Виробник : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 25V; 8A; Idm: 50A; 2W Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 8A Pulsed drain current: 50A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12V On-state resistance: 24mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||||||
Si4228DY-T1-GE3 | Виробник : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 25V; 8A; Idm: 50A; 2W Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 8A Pulsed drain current: 50A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12V On-state resistance: 24mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |