SI4056ADY-T1-GE3 VISHAY
Виробник: VISHAY
Description: VISHAY - SI4056ADY-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 8.3 A, 0.0243 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 8.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0243ohm
SVHC: Lead (10-Jun-2022)
Description: VISHAY - SI4056ADY-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 8.3 A, 0.0243 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 8.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0243ohm
SVHC: Lead (10-Jun-2022)
на замовлення 7241 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
100+ | 38.06 грн |
500+ | 29.54 грн |
1000+ | 24.15 грн |
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Технічний опис SI4056ADY-T1-GE3 VISHAY
Description: VISHAY - SI4056ADY-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 8.3 A, 0.0243 ohm, SOIC, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 100V, rohsCompliant: YES, Dauer-Drainstrom Id: 8.3A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2.5V, euEccn: NLR, Verlustleistung: 5W, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen IV, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.0243ohm, SVHC: Lead (10-Jun-2022).
Інші пропозиції SI4056ADY-T1-GE3 за ціною від 19.89 грн до 64.27 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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SI4056ADY-T1-GE3 | Виробник : VISHAY |
Description: VISHAY - SI4056ADY-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 8.3 A, 0.0243 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 8.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 5W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0243ohm SVHC: Lead (10-Jun-2022) |
на замовлення 7241 шт: термін постачання 21-31 дні (днів) |
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SI4056ADY-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 100V 5.9A/8.3A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 8.3A (Tc) Rds On (Max) @ Id, Vgs: 29.2mOhm @ 5.9A, 10V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V |
на замовлення 1119 шт: термін постачання 21-31 дні (днів) |
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SI4056ADY-T1-GE3 | Виробник : Vishay / Siliconix | MOSFETs 100V N-CH D-S MOSFET |
на замовлення 135957 шт: термін постачання 21-30 дні (днів) |
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SI4056ADY-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 8.3A; Idm: 40A; 5W Kind of package: reel; tape Drain-source voltage: 100V Drain current: 8.3A On-state resistance: 33mΩ Type of transistor: N-MOSFET Power dissipation: 5W Polarisation: unipolar Gate charge: 29nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: SO8 кількість в упаковці: 2500 шт |
товар відсутній |
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SI4056ADY-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 100V 5.9A/8.3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 8.3A (Tc) Rds On (Max) @ Id, Vgs: 29.2mOhm @ 5.9A, 10V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V |
товар відсутній |
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SI4056ADY-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 8.3A; Idm: 40A; 5W Kind of package: reel; tape Drain-source voltage: 100V Drain current: 8.3A On-state resistance: 33mΩ Type of transistor: N-MOSFET Power dissipation: 5W Polarisation: unipolar Gate charge: 29nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: SO8 |
товар відсутній |