SI3805DV-T1-GE3 Vishay / Siliconix

Description: MOSFET P-CH 20V 3.3A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc), Rds On (Max) @ Id, Vgs: 84mOhm @ 3A, 10V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.1W (Ta), 1.4W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V.