Технічний опис SI2319-TP Micro Commercial Components
Description: MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Supplier Device Package: SOT-23, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A, Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V, Power Dissipation (Max): 1.25W, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 548 pF @ 20 V.
Інші пропозиції SI2319-TP
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SI2319-TP | Виробник : Micro Commercial Components | P-Channel MOSFET |
товар відсутній |
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SI2319-TP | Виробник : Micro Commercial Co |
Description: MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Supplier Device Package: SOT-23 Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V Power Dissipation (Max): 1.25W Vgs(th) (Max) @ Id: 2.5V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 548 pF @ 20 V |
товар відсутній |
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SI2319-TP | Виробник : Micro Commercial Components (MCC) | MOSFETs |
товар відсутній |