SI2303CDS-T1-BE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 1.9A/2.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V
Power Dissipation (Max): 1W (Ta), 2.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
Description: MOSFET P-CH 30V 1.9A/2.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V
Power Dissipation (Max): 1W (Ta), 2.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 10.39 грн |
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Технічний опис SI2303CDS-T1-BE3 Vishay Siliconix
Description: MOSFET P-CH 30V 1.9A/2.7A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.7A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V, Power Dissipation (Max): 1W (Ta), 2.3W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V.
Інші пропозиції SI2303CDS-T1-BE3 за ціною від 9.38 грн до 32.92 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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SI2303CDS-T1-BE3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 30V 1.9A/2.7A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.7A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V Power Dissipation (Max): 1W (Ta), 2.3W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V |
на замовлення 5810 шт: термін постачання 21-31 дні (днів) |
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SI2303CDS-T1-BE3 | Виробник : Vishay / Siliconix | MOSFETs 30V P-CHANNEL (D-S) |
на замовлення 75250 шт: термін постачання 21-30 дні (днів) |
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SI2303CDS-T1-BE3 | Виробник : Vishay | P-Channel MOSFET |
товар відсутній |
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SI2303CDS-T1-BE3 | Виробник : Vishay | Trans MOSFET P-CH 30V 2.7A 3-Pin SOT-23 T/R |
товар відсутній |
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SI2303CDS-T1-BE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.7A Pulsed drain current: -10A Power dissipation: 2.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.33Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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SI2303CDS-T1-BE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.7A Pulsed drain current: -10A Power dissipation: 2.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.33Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |