Технічний опис SI1413DH-T1-E3 VISHAY
Description: MOSFET P-CH 20V 2.3A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), Rds On (Max) @ Id, Vgs: 115mOhm @ 2.9A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 800mV @ 100µA, Supplier Device Package: SC-70-6, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V.
Інші пропозиції SI1413DH-T1-E3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SI1413DH-T1-E3 | Виробник : Vishay | Trans MOSFET P-CH 20V 2.3A 6-Pin SC-70 T/R |
товар відсутній |
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SI1413DH-T1-E3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 20V 2.3A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 115mOhm @ 2.9A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 800mV @ 100µA Supplier Device Package: SC-70-6 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V |
товар відсутній |
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SI1413DH-T1-E3 | Виробник : Vishay / Siliconix | MOSFET 20V 2.9A 1.0W |
товар відсутній |