Технічний опис SI1404BDH-T1-E3
Description: MOSFET N-CH 30V 1.9A/2.37A SC70, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.37A (Tc), Rds On (Max) @ Id, Vgs: 238mOhm @ 1.9A, 4.5V, Power Dissipation (Max): 1.32W (Ta), 2.28W (Tc), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SC-70-6, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V.
Інші пропозиції SI1404BDH-T1-E3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SI1404BDH-T1-E3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 30V 1.9A/2.37A SC70 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.37A (Tc) Rds On (Max) @ Id, Vgs: 238mOhm @ 1.9A, 4.5V Power Dissipation (Max): 1.32W (Ta), 2.28W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V |
товар відсутній |
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SI1404BDH-T1-E3 | Виробник : Vishay / Siliconix | MOSFET 30V 1.9A 2.25W |
товар відсутній |